All Transistors. UN1117R Datasheet

 

UN1117R Datasheet and Replacement


   Type Designator: UN1117R
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 22 kOhm
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 210
   Noise Figure, dB: -
   Package: M-A1
 

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UN1117R Datasheet (PDF)

 ..1. Size:263K  panasonic
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UN1117R

Transistors with built-in ResistorUNR1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/111D/111E/111F/111H/111L(UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/Unit: mm111D/111E/111F/111H/111L)2.50.16.90.1(1.0)(1.5)Silicon PNP epitaxial planar transistor(1.5)R 0.9For digital circuitsR 0.7FeaturesCosts can be reduced through downsizing of the equipment and

Datasheet: UN1114 , UN1115Q , UN1115R , UN1115S , UN1116Q , UN1116R , UN1116S , UN1117Q , TIP31C , UN1117S , UN1118 , UN1119 , UN111D , UN111E , UN111F , UN111H , UN111L .

History: 2SC848 | 2SD2607 | KSC2883Y | 2N3737A | MSD42W

Keywords - UN1117R transistor datasheet

 UN1117R cross reference
 UN1117R equivalent finder
 UN1117R lookup
 UN1117R substitution
 UN1117R replacement

 

 
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