UN1222 PDF Specs and Replacement
Type Designator: UN1222
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: M-A1
UN1222 Substitution
UN1222 PDF detailed specifications
un1221 un1222 un1223 un1224.pdf
Transistors with built-in Resistor UNR1221/1222/1223/1224 (UN1221/1222/1223/1224) Unit mm Silicon NPN epitaxial planer transistor 6.9 0.1 2.5 0.1 For digital circuits 1.5 1.5 R0.9 1.0 R0.9 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing... See More ⇒
Detailed specifications: UN1218 , UN1219 , UN121D , UN121E , UN121F , UN121L , UN121K , UN1221 , BC549 , UN1223 , UN1224 , UN2110Q , UN2110R , UN2110S , UN2111 , UN2112 , UN2113 .
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