UN1222 Datasheet, Equivalent, Cross Reference Search
Type Designator: UN1222
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.6
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: M-A1
UN1222 Transistor Equivalent Substitute - Cross-Reference Search
UN1222 Datasheet (PDF)
un1221 un1222 un1223 un1224.pdf
Transistors with built-in ResistorUNR1221/1222/1223/1224 (UN1221/1222/1223/1224)Unit: mmSilicon NPN epitaxial planer transistor6.90.1 2.50.1For digital circuits 1.51.5 R0.9 1.0R0.9FeaturesCosts can be reduced through downsizing of the equipment andreduction of the number of parts.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
