UN212Y Datasheet and Replacement
Type Designator: UN212Y
SMD Transistor Code: 7Y
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 3.1 kOhm
Built in Bias Resistor R2 = 4.6 kOhm
Typical Resistor Ratio R1/R2 = 0.67
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT23 SC59
UN212Y Substitution
UN212Y Datasheet (PDF)
un2121 un2122 un2123 un2124 un212x un212y.pdf

Transistors with built-in ResistorUN2121/2122/2123/2124/212X/212YSilicon PNP epitaxial planer transistorFor digital circuitsUnit: mm+0.22.8 0.3Features +0.250.65 0.15 1.5 0.05 0.65 0.15Costs can be reduced through downsizing of the equipment andreduction of the number of parts. 1Mini type package, allowing downsizing of the equipment andautomatic insertion
Datasheet: UN211T , UN211V , UN211Z , UN2121 , UN2122 , UN2123 , UN2124 , UN212X , C5198 , UN2210Q , UN2210R , UN2210S , UN2211 , UN2212 , UN2213 , UN2214 , UN2215Q .
History: MJE13005A | MP4020 | PBSS4021SPN | 2SA257 | MRF839 | BC847BR
Keywords - UN212Y transistor datasheet
UN212Y cross reference
UN212Y equivalent finder
UN212Y lookup
UN212Y substitution
UN212Y replacement
History: MJE13005A | MP4020 | PBSS4021SPN | 2SA257 | MRF839 | BC847BR



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