UN212Y Datasheet. Specs and Replacement

Type Designator: UN212Y  📄📄 

SMD Transistor Code: 7Y

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 3.1 kOhm

Built in Bias Resistor R2 = 4.6 kOhm

Typical Resistor Ratio R1/R2 = 0.67

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT23 SC59

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UN212Y datasheet

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 un2121 un2122 un2123 un2124 un212x un212y.pdf pdf_icon

UN212Y

Transistors with built-in Resistor UN2121/2122/2123/2124/212X/212Y Silicon PNP epitaxial planer transistor For digital circuits Unit mm +0.2 2.8 0.3 Features +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 1 Mini type package, allowing downsizing of the equipment and automatic insertion ... See More ⇒

Detailed specifications: UN211T, UN211V, UN211Z, UN2121, UN2122, UN2123, UN2124, UN212X, 2N3055, UN2210Q, UN2210R, UN2210S, UN2211, UN2212, UN2213, UN2214, UN2215Q

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