UN212Y Datasheet, Equivalent, Cross Reference Search
Type Designator: UN212Y
SMD Transistor Code: 7Y
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 3.1 kOhm
Built in Bias Resistor R2 = 4.6 kOhm
Typical Resistor Ratio R1/R2 = 0.67
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT23
SC59
UN212Y Transistor Equivalent Substitute - Cross-Reference Search
UN212Y Datasheet (PDF)
un2121 un2122 un2123 un2124 un212x un212y.pdf
Transistors with built-in ResistorUN2121/2122/2123/2124/212X/212YSilicon PNP epitaxial planer transistorFor digital circuitsUnit: mm+0.22.8 0.3Features +0.250.65 0.15 1.5 0.05 0.65 0.15Costs can be reduced through downsizing of the equipment andreduction of the number of parts. 1Mini type package, allowing downsizing of the equipment andautomatic insertion
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
