BDL31 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDL31
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.35 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 130 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT223
BDL31 Transistor Equivalent Substitute - Cross-Reference Search
BDL31 Datasheet (PDF)
..1. Size:48K philips
bdl31 4.pdf
bdl31 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087BDL31NPN BISS-transistorProduct specification 1999 Apr 28Supersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN BISS-transistor BDL31FEATURES PINNING High current (max. 5 A)PIN DESCRIPTION Low voltage (max. 10 V)1 base Low collector-emitter saturation voltage ensures2 not co
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
