All Transistors. BDL31 Datasheet

 

BDL31 Datasheet and Replacement


   Type Designator: BDL31
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.35 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 130 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT223
 

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BDL31 Datasheet (PDF)

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BDL31

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087BDL31NPN BISS-transistorProduct specification 1999 Apr 28Supersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN BISS-transistor BDL31FEATURES PINNING High current (max. 5 A)PIN DESCRIPTION Low voltage (max. 10 V)1 base Low collector-emitter saturation voltage ensures2 not co

Datasheet: 2PC4617 , 2PC4617J , 2PC945 , 2PD1820A , BCV63B , BCV63 , BCV64B , BCV65 , B647 , BDL32 , BDP31 , BDP32 , BFE505 , BFE520 , BFG10 , BFG10W-X , BFG11 .

History: 2SC2458 | MPQ5447 | BU122 | CSD1025 | UN4119 | CN300 | 2SC4358

Keywords - BDL31 transistor datasheet

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