BDL31 Datasheet. Specs and Replacement

Type Designator: BDL31  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.35 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 130 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT223

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BDL31 datasheet

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BDL31

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BDL31 NPN BISS-transistor Product specification 1999 Apr 28 Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN BISS-transistor BDL31 FEATURES PINNING High current (max. 5 A) PIN DESCRIPTION Low voltage (max. 10 V) 1 base Low collector-emitter saturation voltage ensures 2 not co... See More ⇒

Detailed specifications: 2PC4617, 2PC4617J, 2PC945, 2PD1820A, BCV63B, BCV63, BCV64B, BCV65, 2SC828, BDL32, BDP31, BDP32, BFE505, BFE520, BFG10, BFG10W-X, BFG11

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