BDP31 Datasheet. Specs and Replacement

Type Designator: BDP31  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.35 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT223

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BDP31 datasheet

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BDP31

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BDP31 NPN medium power transistor 1999 Apr 23 Product specification Supersedes data of 1997 Mar 10 Philips Semiconductors Product specification NPN medium power transistor BDP31 FEATURES PINNING High current (max. 3 A) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2,4 collector APPLICATIONS 3 emitter ... See More ⇒

Detailed specifications: 2PC945, 2PD1820A, BCV63B, BCV63, BCV64B, BCV65, BDL31, BDL32, S9018, BDP32, BFE505, BFE520, BFG10, BFG10W-X, BFG11, BFG11-X, BFG11W-X

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