All Transistors. BDP31 Datasheet

 

BDP31 Datasheet and Replacement


   Type Designator: BDP31
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.35 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: SOT223

 BDP31 Transistor Equivalent Substitute - Cross-Reference Search

   

BDP31 Datasheet (PDF)

 ..1. Size:49K  philips
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BDP31

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BDP31 NPN medium power transistor 1999 Apr 23 Product specification Supersedes data of 1997 Mar 10 Philips Semiconductors Product specification NPN medium power transistor BDP31 FEATURES PINNING High current (max. 3 A) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2,4 collector APPLICATIONS 3 emitter ... See More ⇒

Datasheet: 2PC945 , 2PD1820A , BCV63B , BCV63 , BCV64B , BCV65 , BDL31 , BDL32 , S9018 , BDP32 , BFE505 , BFE520 , BFG10 , BFG10W-X , BFG11 , BFG11-X , BFG11W-X .

History: MMBTRC102SS | HEPS9151 | 2SB939A | 2N567 | 2SD1715 | 2N1493

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