All Transistors. BDP31 Datasheet

 

BDP31 Datasheet and Replacement


   Type Designator: BDP31
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.35 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: SOT223
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BDP31 Datasheet (PDF)

 ..1. Size:49K  philips
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BDP31

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087BDP31NPN medium power transistor1999 Apr 23Product specificationSupersedes data of 1997 Mar 10Philips Semiconductors Product specificationNPN medium power transistor BDP31FEATURES PINNING High current (max. 3 A)PIN DESCRIPTION Low voltage (max. 45 V).1 base2,4 collectorAPPLICATIONS3 emitter

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SA1262 | 2SA1407E | NB221YX | 2SC3712 | 2N4413A | 2N2872 | T11

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