BFG21W Datasheet. Specs and Replacement

Type Designator: BFG21W  📄📄 

SMD Transistor Code: P1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 4.5 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 18000 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT343R

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BFG21W datasheet

 ..1. Size:217K  philips

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BFG21W

DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG21W UHF power transistor Product specification 1998 Jul 06 Supersedes data of 1997 Nov 21 NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING High power gain PIN DESCRIPTION High efficiency 1, 3 emitter 1.9 GHz operating area 2base Linear and non-linear operation. 4 collector APPL... See More ⇒

 ..2. Size:88K  philips

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BFG21W

DISCRETE SEMICONDUCTORS M3D124 BFG21W UHF power transistor 1998 Jul 06 Product specification Supersedes data of 1997 Nov 21 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING High power gain PIN DESCRIPTION High efficiency 1, 3 emitter 1.9 GHz operating area 2 base Linear and non-li... See More ⇒

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BFG21W

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BFG21W

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Detailed specifications: BDP32, BFE505, BFE520, BFG10, BFG10W-X, BFG11, BFG11-X, BFG11W-X, BD333, 2SB1366F-O, BFG31, BFG403W, BFG425W, BFG505, BFG505W, BFG520, BFG520W

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