All Transistors. BFG403W Datasheet

 

BFG403W Datasheet and Replacement


   Type Designator: BFG403W
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.016 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 4.5 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.0036 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 17000 MHz
   Collector Capacitance (Cc): 0.17 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT343R
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BFG403W Datasheet (PDF)

 ..1. Size:369K  philips
 bfg403w.pdf pdf_icon

BFG403W

DISCRETE SEMICONDUCTORS DATA SHEETBFG403WNPN 17 GHz wideband transistorProduct specification 1998 Mar 11Supersedes data of 1997 Oct 29NXP Semiconductors Product specificationNPN 17 GHz wideband transistor BFG403WFEATURES PINNING Low currentPIN DESCRIPTION Very high power gain1emitter Low noise figure2 base High transition frequency3emitter Very

 ..2. Size:86K  philips
 bfg403w 4.pdf pdf_icon

BFG403W

DISCRETE SEMICONDUCTORSBFG403WNPN 17 GHz wideband transistorProduct specification 1998 Mar 11Supersedes data of 1997 Oct 29File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 17 GHz wideband transistor BFG403WFEATURES PINNING Low currentPIN DESCRIPTION Very high power gain1 emitter Low noise figure2 base High transit

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: SML4007A | 2SC3617 | 2N2612 | DTC114T | MMS8550 | SF123 | UN9110S

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