BFG403W Datasheet. Specs and Replacement

Type Designator: BFG403W  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.016 W

Maximum Collector-Base Voltage |Vcb|: 10 V

Maximum Collector-Emitter Voltage |Vce|: 4.5 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.0036 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 17000 MHz

Collector Capacitance (Cc): 0.17 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT343R

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BFG403W datasheet

 ..1. Size:369K  philips

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BFG403W

DISCRETE SEMICONDUCTORS DATA SHEET BFG403W NPN 17 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29 NXP Semiconductors Product specification NPN 17 GHz wideband transistor BFG403W FEATURES PINNING Low current PIN DESCRIPTION Very high power gain 1emitter Low noise figure 2 base High transition frequency 3emitter Very... See More ⇒

 ..2. Size:86K  philips

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BFG403W

DISCRETE SEMICONDUCTORS BFG403W NPN 17 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 17 GHz wideband transistor BFG403W FEATURES PINNING Low current PIN DESCRIPTION Very high power gain 1 emitter Low noise figure 2 base High transit... See More ⇒

Detailed specifications: BFG10, BFG10W-X, BFG11, BFG11-X, BFG11W-X, BFG21W, 2SB1366F-O, BFG31, BC547, BFG425W, BFG505, BFG505W, BFG520, BFG520W, BFG590, BFG590W, BFG591

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