BFG403W Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG403W
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.016 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 4.5 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.0036 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 17000 MHz
Collector Capacitance (Cc): 0.17 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT343R
BFG403W Transistor Equivalent Substitute - Cross-Reference Search
BFG403W Datasheet (PDF)
bfg403w.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFG403WNPN 17 GHz wideband transistorProduct specification 1998 Mar 11Supersedes data of 1997 Oct 29NXP Semiconductors Product specificationNPN 17 GHz wideband transistor BFG403WFEATURES PINNING Low currentPIN DESCRIPTION Very high power gain1emitter Low noise figure2 base High transition frequency3emitter Very
bfg403w 4.pdf
DISCRETE SEMICONDUCTORSBFG403WNPN 17 GHz wideband transistorProduct specification 1998 Mar 11Supersedes data of 1997 Oct 29File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 17 GHz wideband transistor BFG403WFEATURES PINNING Low currentPIN DESCRIPTION Very high power gain1 emitter Low noise figure2 base High transit
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
