BFS540 Datasheet. Specs and Replacement
Type Designator: BFS540 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.12 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 9000 MHz
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 100
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BFS540 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification 2000 May 30 Supersedes data of 1997 Dec 05 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 FEATURES DESCRIPTION High power gain NPN transistor in a SOT323 plastic package. Low noise figure 3 handbook, 2 columns High tr... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification 2000 May 30 Supersedes data of 1997 Dec 05 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 FEATURES DESCRIPTION High power gain NPN transistor in a SOT323 plastic package. Low noise figure 3 handbook, 2 columns High tr... See More ⇒
Detailed specifications: BFQ151, BFQ166, BFQ256, BFQ256A, BFR520, BFR520T, BFS25A, BFS520, TIP3055, BLS2731-10, BLS2731-110, BLS2731-20, BLS2731-50, BLS3135-10, BLS3135-20, BLS3135-50, BLS3135-65
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BJT Parameters and How They Relate
History: MUN2230T1G | MT0491 | RN2901 | RN2311 | BDX34C | RN2907FS | 2N6116
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