BLT13 Datasheet. Specs and Replacement

Type Designator: BLT13  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT96-1

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BLT13 datasheet

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BLT13

DISCRETE SEMICONDUCTORS DATA SHEET BLT13 UHF power transistor 1996 Apr 12 Preliminary specification File under Discrete Semiconductors, SC08b Philips Semiconductors Preliminary specification UHF power transistor BLT13 FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. High gain Internal pre-... See More ⇒

Detailed specifications: BLS2731-10, BLS2731-110, BLS2731-20, BLS2731-50, BLS3135-10, BLS3135-20, BLS3135-50, BLS3135-65, 2SD718, BLT52, BLT53, BLT61, BLT70, BLT71-8, BLT81, BLT82, BLT94

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