All Transistors. BLT13 Datasheet

 

BLT13 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BLT13
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT96-1

 BLT13 Transistor Equivalent Substitute - Cross-Reference Search

   

BLT13 Datasheet (PDF)

 ..1. Size:54K  philips
 blt13.pdf

BLT13 BLT13

DISCRETE SEMICONDUCTORSDATA SHEETBLT13UHF power transistor1996 Apr 12Preliminary specificationFile under Discrete Semiconductors, SC08bPhilips Semiconductors Preliminary specificationUHF power transistor BLT13FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in aplastic SOT96-1 (SO8) SMD package. High gain Internal pre-

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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