All Transistors. BLT13 Datasheet

 

BLT13 Datasheet and Replacement


   Type Designator: BLT13
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT96-1

 BLT13 Transistor Equivalent Substitute - Cross-Reference Search

   

BLT13 Datasheet (PDF)

 ..1. Size:54K  philips
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BLT13

DISCRETE SEMICONDUCTORS DATA SHEET BLT13 UHF power transistor 1996 Apr 12 Preliminary specification File under Discrete Semiconductors, SC08b Philips Semiconductors Preliminary specification UHF power transistor BLT13 FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. High gain Internal pre-... See More ⇒

Datasheet: BLS2731-10 , BLS2731-110 , BLS2731-20 , BLS2731-50 , BLS3135-10 , BLS3135-20 , BLS3135-50 , BLS3135-65 , 2SD718 , BLT52 , BLT53 , BLT61 , BLT70 , BLT71-8 , BLT81 , BLT82 , BLT94 .

History: 2SC2927 | TTA1943 | BFT13 | KRC658E | 2SC1343 | SGSF321 | 3N131

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