BLT52 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLT52
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 13 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 24 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT409A
BLT52 Transistor Equivalent Substitute - Cross-Reference Search
BLT52 Datasheet (PDF)
..1. Size:78K philips
blt52.pdf
blt52.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D175BLT52UHF power transistor1998 Jan 28Product specificationSupersedes data of 1997 Oct 15Philips Semiconductors Product specificationUHF power transistor BLT52FEATURES PINNING Emitter ballasting resistors for an optimumPIN DESCRIPTIONtemperature profile1, 4, 5, 8 emitter Gold metallization ensures excellent reliability.
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
