BLT52 Datasheet. Specs and Replacement

Type Designator: BLT52  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 13 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 2.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 24 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT409A

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BLT52 datasheet

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BLT52

DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLT52 UHF power transistor 1998 Jan 28 Product specification Supersedes data of 1997 Oct 15 Philips Semiconductors Product specification UHF power transistor BLT52 FEATURES PINNING Emitter ballasting resistors for an optimum PIN DESCRIPTION temperature profile 1, 4, 5, 8 emitter Gold metallization ensures excellent reliability. ... See More ⇒

Detailed specifications: BLS2731-110, BLS2731-20, BLS2731-50, BLS3135-10, BLS3135-20, BLS3135-50, BLS3135-65, BLT13, 13003, BLT53, BLT61, BLT70, BLT71-8, BLT81, BLT82, BLT94, BLU11-SL

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