BLT53 Datasheet. Specs and Replacement

Type Designator: BLT53  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 35.5 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 2.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 3900 MHz

Collector Capacitance (Cc): 24 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT122D

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BLT53 datasheet

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BLT53

DISCRETE SEMICONDUCTORS DATA SHEET BLT53 UHF power transistor May 1991 Product specification Philips Semiconductors Product specification UHF power transistor BLT53 FEATURES QUICK REFERENCE DATA RF performance at Tmb = 25 C in a common emitter test circuit. Emitter-ballasting resistors for an optimum temperature profile MODE OF f VCE PL Gp c Gold metallization ensures ... See More ⇒

Detailed specifications: BLS2731-20, BLS2731-50, BLS3135-10, BLS3135-20, BLS3135-50, BLS3135-65, BLT13, BLT52, 2SD1047, BLT61, BLT70, BLT71-8, BLT81, BLT82, BLT94, BLU11-SL, BLU56

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