BLT53 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLT53
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 35.5 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3900 MHz
Collector Capacitance (Cc): 24 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT122D
BLT53 Transistor Equivalent Substitute - Cross-Reference Search
BLT53 Datasheet (PDF)
..1. Size:60K philips
blt53.pdf
blt53.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLT53UHF power transistorMay 1991Product specificationPhilips Semiconductors Product specificationUHF power transistor BLT53FEATURES QUICK REFERENCE DATARF performance at Tmb = 25 C in a common emitter test circuit. Emitter-ballasting resistors for anoptimum temperature profileMODE OF f VCE PL Gp c Gold metallization ensures
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
