All Transistors. BLT70 Datasheet

 

BLT70 Datasheet and Replacement


   Type Designator: BLT70
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2.1 W
   Maximum Collector-Base Voltage |Vcb|: 16 V
   Maximum Collector-Emitter Voltage |Vce|: 8 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.25 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT223H
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BLT70 Datasheet (PDF)

 ..1. Size:60K  philips
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BLT70

DISCRETE SEMICONDUCTORSDATA SHEETBLT70UHF power transistor1996 Feb 06Product specificationPhilips Semiconductors Product specificationUHF power transistor BLT70FEATURES Very high efficiency Low supply voltage.handbook, halfpage4APPLICATIONS Hand-held radio equipment in common emitter class-ABcoperation in the 900 MHz communication band.bDESCRIPTION

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: FZT560 | CH867UPNGP | ET5065 | AFY29 | NJD2873T4G | KT716A | BU912

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