BLT70 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLT70
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2.1 W
Maximum Collector-Base Voltage |Vcb|: 16 V
Maximum Collector-Emitter Voltage |Vce|: 8 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.25 A
Max. Operating Junction Temperature (Tj): 175 °C
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT223H
BLT70 Transistor Equivalent Substitute - Cross-Reference Search
BLT70 Datasheet (PDF)
blt70.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLT70UHF power transistor1996 Feb 06Product specificationPhilips Semiconductors Product specificationUHF power transistor BLT70FEATURES Very high efficiency Low supply voltage.handbook, halfpage4APPLICATIONS Hand-held radio equipment in common emitter class-ABcoperation in the 900 MHz communication band.bDESCRIPTION
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .