BLT70 Datasheet. Specs and Replacement

Type Designator: BLT70  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2.1 W

Maximum Collector-Base Voltage |Vcb|: 16 V

Maximum Collector-Emitter Voltage |Vce|: 8 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.25 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT223H

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BLT70 datasheet

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BLT70

DISCRETE SEMICONDUCTORS DATA SHEET BLT70 UHF power transistor 1996 Feb 06 Product specification Philips Semiconductors Product specification UHF power transistor BLT70 FEATURES Very high efficiency Low supply voltage. handbook, halfpage 4 APPLICATIONS Hand-held radio equipment in common emitter class-AB c operation in the 900 MHz communication band. b DESCRIPTION ... See More ⇒

Detailed specifications: BLS3135-10, BLS3135-20, BLS3135-50, BLS3135-65, BLT13, BLT52, BLT53, BLT61, S9014, BLT71-8, BLT81, BLT82, BLT94, BLU11-SL, BLU56, BLU86, BLV12

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