BLT82 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLT82
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.9 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Collector Capacitance (Cc): 17 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT96-1
BLT82 Transistor Equivalent Substitute - Cross-Reference Search
BLT82 Datasheet (PDF)
..1. Size:75K philips
blt82.pdf
blt82.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLT82UHF power transistor1996 Feb 05Product specificationPhilips Semiconductors Product specificationUHF power transistor BLT82FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in aplastic SOT96-1 (SO8) SMD package. High gain Internal pre-matched input.APPLICATIONShandbook, halfpage8
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
