BLT82 Datasheet. Specs and Replacement

Type Designator: BLT82  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.9 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 3.5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Collector Capacitance (Cc): 17 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT96-1

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BLT82 datasheet

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BLT82

DISCRETE SEMICONDUCTORS DATA SHEET BLT82 UHF power transistor 1996 Feb 05 Product specification Philips Semiconductors Product specification UHF power transistor BLT82 FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. High gain Internal pre-matched input. APPLICATIONS handbook, halfpage 8... See More ⇒

Detailed specifications: BLS3135-65, BLT13, BLT52, BLT53, BLT61, BLT70, BLT71-8, BLT81, S8550, BLT94, BLU11-SL, BLU56, BLU86, BLV12, BLV193, BLV194, BLV58

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