BLT82 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLT82
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.9 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Collector Capacitance (Cc): 17 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT96-1
BLT82 Transistor Equivalent Substitute - Cross-Reference Search
BLT82 Datasheet (PDF)
blt82.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLT82UHF power transistor1996 Feb 05Product specificationPhilips Semiconductors Product specificationUHF power transistor BLT82FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in aplastic SOT96-1 (SO8) SMD package. High gain Internal pre-matched input.APPLICATIONShandbook, halfpage8
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
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