All Transistors. BLT82 Datasheet

 

BLT82 Datasheet and Replacement


   Type Designator: BLT82
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.9 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Collector Capacitance (Cc): 17 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT96-1

 BLT82 Transistor Equivalent Substitute - Cross-Reference Search

   

BLT82 Datasheet (PDF)

 ..1. Size:75K  philips
 blt82.pdf pdf_icon

BLT82

DISCRETE SEMICONDUCTORS DATA SHEET BLT82 UHF power transistor 1996 Feb 05 Product specification Philips Semiconductors Product specification UHF power transistor BLT82 FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. High gain Internal pre-matched input. APPLICATIONS handbook, halfpage 8... See More ⇒

Datasheet: BLS3135-65 , BLT13 , BLT52 , BLT53 , BLT61 , BLT70 , BLT71-8 , BLT81 , S8550 , BLT94 , BLU11-SL , BLU56 , BLU86 , BLV12 , BLV193 , BLV194 , BLV58 .

History: KD2305A | KRC837U

Keywords - BLT82 transistor datasheet

 BLT82 cross reference
 BLT82 equivalent finder
 BLT82 lookup
 BLT82 substitution
 BLT82 replacement

 

 
Back to Top

 


 
.