All Transistors. BLT82 Datasheet

 

BLT82 Datasheet and Replacement


   Type Designator: BLT82
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.9 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Collector Capacitance (Cc): 17 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT96-1
 

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BLT82 Datasheet (PDF)

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BLT82

DISCRETE SEMICONDUCTORSDATA SHEETBLT82UHF power transistor1996 Feb 05Product specificationPhilips Semiconductors Product specificationUHF power transistor BLT82FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in aplastic SOT96-1 (SO8) SMD package. High gain Internal pre-matched input.APPLICATIONShandbook, halfpage8

Datasheet: BLS3135-65 , BLT13 , BLT52 , BLT53 , BLT61 , BLT70 , BLT71-8 , BLT81 , A940 , BLT94 , BLU11-SL , BLU56 , BLU86 , BLV12 , BLV193 , BLV194 , BLV58 .

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