BLV857 Datasheet and Replacement
Type Designator: BLV857
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 28 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 7.4 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 18 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT324B
BLV857 Substitution
BLV857 Datasheet (PDF)
blv857.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLV857UHF linear push-pull powertransistor1997 Jan 16Product specificationSupersedes data of 1995 Oct 04Philips Semiconductors Product specificationUHF linear push-pull power transistor BLV857FEATURES PINNING SOT324B Internal input matching for an optimum widebandPIN SYMBOL DESCRIPTIONcapability and high gain1 c1 collector 1
blv859.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLV859UHF linear push-pull powertransistor1996 Jul 26Product specificationSupersedes data of 1995 Oct 04Philips Semiconductors Product specificationUHF linear push-pull power transistor BLV859FEATURES PINNING SOT262B Double internal input and output matching for anPIN SYMBOL DESCRIPTIONoptimum wideband capability and high gain1 c1
Datasheet: BLT94 , BLU11-SL , BLU56 , BLU86 , BLV12 , BLV193 , BLV194 , BLV58 , 2SC1815 , BLV859 , BLV861 , BLV862 , BLV897 , BLW30 , BLW97 , BRY39 , BRY56 .
History: NSBA123JDP6
Keywords - BLV857 transistor datasheet
BLV857 cross reference
BLV857 equivalent finder
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History: NSBA123JDP6



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