BLV857 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV857
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 28 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 7.4 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 18 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT324B
BLV857 Transistor Equivalent Substitute - Cross-Reference Search
BLV857 Datasheet (PDF)
blv857.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV857UHF linear push-pull powertransistor1997 Jan 16Product specificationSupersedes data of 1995 Oct 04Philips Semiconductors Product specificationUHF linear push-pull power transistor BLV857FEATURES PINNING SOT324B Internal input matching for an optimum widebandPIN SYMBOL DESCRIPTIONcapability and high gain1 c1 collector 1
blv859.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV859UHF linear push-pull powertransistor1996 Jul 26Product specificationSupersedes data of 1995 Oct 04Philips Semiconductors Product specificationUHF linear push-pull power transistor BLV859FEATURES PINNING SOT262B Double internal input and output matching for anPIN SYMBOL DESCRIPTIONoptimum wideband capability and high gain1 c1
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
