BLV857 Datasheet. Specs and Replacement

Type Designator: BLV857  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 28 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 7.4 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 18 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT324B

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BLV857 datasheet

 ..1. Size:106K  philips

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BLV857

DISCRETE SEMICONDUCTORS DATA SHEET BLV857 UHF linear push-pull power transistor 1997 Jan 16 Product specification Supersedes data of 1995 Oct 04 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV857 FEATURES PINNING SOT324B Internal input matching for an optimum wideband PIN SYMBOL DESCRIPTION capability and high gain 1 c1 collector 1 ... See More ⇒

 9.1. Size:98K  philips

 blv859.pdf pdf_icon

BLV857

DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor 1996 Jul 26 Product specification Supersedes data of 1995 Oct 04 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 FEATURES PINNING SOT262B Double internal input and output matching for an PIN SYMBOL DESCRIPTION optimum wideband capability and high gain 1 c1... See More ⇒

Detailed specifications: BLT94, BLU11-SL, BLU56, BLU86, BLV12, BLV193, BLV194, BLV58, TIP35C, BLV859, BLV861, BLV862, BLV897, BLW30, BLW97, BRY39, BRY56

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