All Transistors. FJB102 Datasheet

 

FJB102 Datasheet and Replacement


   Type Designator: FJB102
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO263
 
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FJB102 Datasheet (PDF)

 ..1. Size:159K  fairchild semi
 fjb102.pdf pdf_icon

FJB102

FJB102High Voltage Power Darlington TransistorFeatures High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) Low Collector-Emitter Saturation Voltage High Collector-Emitter Sustaining Voltage Monolithic Construction with Built-in Base-Emitter Shunt Resistors Industrial UseEquivalent CircuitCBD2-PAK1R1 R21.Base 2.Collector 3.EmitterER1 10k

Datasheet: 2SA1943 , 2SC5200 , BDW94CF , FJA13009 , FJA4210 , FJA4213 , FJA4310 , FJA4313 , 2222A , FJB3307D , FJD3076 , FJD3305H1 , FJD5304D , FJD5553 , FJD5555 , FJE3303 , FJE5304D .

History: 2N356

Keywords - FJB102 transistor datasheet

 FJB102 cross reference
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