All Transistors. FJB102 Datasheet

 

FJB102 Transistor. Datasheet pdf. Equivalent

Type Designator: FJB102

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO263

FJB102 Transistor Equivalent Substitute - Cross-Reference Search

FJB102 Datasheet (PDF)

1.1. fjb102.pdf Size:159K _fairchild_semi

FJB102
FJB102

FJB102 High Voltage Power Darlington Transistor Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) Low Collector-Emitter Saturation Voltage High Collector-Emitter Sustaining Voltage Monolithic Construction with Built-in Base-Emitter Shunt Resistors Industrial Use Equivalent Circuit C B D2-PAK 1 R1 R2 1.Base 2.Collector 3.Emitter E R1 ? 10k? R2 ? 0.6k? Absol

Datasheet: 2SA1943 , 2SC5200 , BDW94CF , FJA13009 , FJA4210 , FJA4213 , FJA4310 , FJA4313 , 2SC1740 , FJB3307D , FJD3076 , FJD3305H1 , FJD5304D , FJD5553 , FJD5555 , FJE3303 , FJE5304D .

 


FJB102
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