All Transistors. FJB102 Datasheet

 

FJB102 Datasheet and Replacement


   Type Designator: FJB102
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO263
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FJB102 Datasheet (PDF)

 ..1. Size:159K  fairchild semi
 fjb102.pdf pdf_icon

FJB102

FJB102High Voltage Power Darlington TransistorFeatures High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) Low Collector-Emitter Saturation Voltage High Collector-Emitter Sustaining Voltage Monolithic Construction with Built-in Base-Emitter Shunt Resistors Industrial UseEquivalent CircuitCBD2-PAK1R1 R21.Base 2.Collector 3.EmitterER1 10k

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BC847RA | 2N2874 | 2SB744A | 2N332A | MMBT3906HE3 | BDW24 | 2N3064

Keywords - FJB102 transistor datasheet

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