FJB102 Datasheet. Specs and Replacement

Type Designator: FJB102  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO263

  📄📄 Copy 

 FJB102 Substitution

- BJT ⓘ Cross-Reference Search

 

FJB102 datasheet

 ..1. Size:159K  fairchild semi

 fjb102.pdf pdf_icon

FJB102

FJB102 High Voltage Power Darlington Transistor Features High DC Current Gain hFE=1000 @ VCE=4V, IC=3A (Min.) Low Collector-Emitter Saturation Voltage High Collector-Emitter Sustaining Voltage Monolithic Construction with Built-in Base-Emitter Shunt Resistors Industrial Use Equivalent Circuit C B D2-PAK 1 R1 R2 1.Base 2.Collector 3.Emitter E R1 10k ... See More ⇒

Detailed specifications: 2SA1943, 2SC5200, BDW94CF, FJA13009, FJA4210, FJA4213, FJA4310, FJA4313, BC549, FJB3307D, FJD3076, FJD3305H1, FJD5304D, FJD5553, FJD5555, FJE3303, FJE5304D

Keywords - FJB102 pdf specs

 FJB102 cross reference

 FJB102 equivalent finder

 FJB102 pdf lookup

 FJB102 substitution

 FJB102 replacement