2N5560 Datasheet. Specs and Replacement

Type Designator: 2N5560  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 175 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 600 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO61

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2N5560 datasheet

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 2n5564 2n5565 2n5566.pdf pdf_icon

2N5560

2N5564/5565/5566 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) 2N5564 -0.5 to -3 -40 7.5 -3 5 2N5565 -0.5 to -3 -40 7.5 -3 10 2N5566 -0.5 to -3 -40 7.5 -3 20 FEATURES BENEFITS APPLICATIONS D Two-Chip Design D Tight Differential Match vs. Current D Wideband Differential Amps D High... See More ⇒

Detailed specifications: 2N5550, 2N5551, 2N5552, 2N5552-1, 2N5552-2, 2N5552-4, 2N5559, 2N556, 2SD669, 2N557, 2N5575, 2N5576, 2N5577, 2N5578, 2N5579, 2N558, 2N5580

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