2N5560 PDF and Equivalents Search

 

2N5560 Specs and Replacement


   Type Designator: 2N5560
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 175 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics


   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 600 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO61
 

 2N5560 Substitution

   - BJT ⓘ Cross-Reference Search

   

2N5560 datasheet

 9.1. Size:89K  vishay
 2n5564 2n5565 2n5566.pdf pdf_icon

2N5560

2N5564/5565/5566 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) 2N5564 -0.5 to -3 -40 7.5 -3 5 2N5565 -0.5 to -3 -40 7.5 -3 10 2N5566 -0.5 to -3 -40 7.5 -3 20 FEATURES BENEFITS APPLICATIONS D Two-Chip Design D Tight Differential Match vs. Current D Wideband Differential Amps D High... See More ⇒

Detailed specifications: 2N5550 , 2N5551 , 2N5552 , 2N5552-1 , 2N5552-2 , 2N5552-4 , 2N5559 , 2N556 , 2SC2240 , 2N557 , 2N5575 , 2N5576 , 2N5577 , 2N5578 , 2N5579 , 2N558 , 2N5580 .

History: BLX53 | 2N1559 | MJE13002F1 | MMDT2907AQ | 2N6186

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