2N5560 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5560
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 175 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO61
2N5560 Transistor Equivalent Substitute - Cross-Reference Search
2N5560 Datasheet (PDF)
9.1. Size:89K vishay
2n5564 2n5565 2n5566.pdf
2n5564 2n5565 2n5566.pdf
2N5564/5565/5566Vishay SiliconixMatched N-Channel JFET PairsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV)2N5564 -0.5 to -3 -40 7.5 -3 52N5565 -0.5 to -3 -40 7.5 -3 102N5566 -0.5 to -3 -40 7.5 -3 20FEATURES BENEFITS APPLICATIONSD Two-Chip Design D Tight Differential Match vs. Current D Wideband Differential AmpsD High
Datasheet: 2N5550 , 2N5551 , 2N5552 , 2N5552-1 , 2N5552-2 , 2N5552-4 , 2N5559 , 2N556 , MD1803DFX , 2N557 , 2N5575 , 2N5576 , 2N5577 , 2N5578 , 2N5579 , 2N558 , 2N5580 .
