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2N5576 Specs and Replacement


   Type Designator: 2N5576
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 80 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 0.4 MHz
   Collector Capacitance (Cc): 2000 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO66
 

 2N5576 Substitution

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2N5576 detailed specifications

 9.1. Size:11K  semelab
 2n5575.pdf pdf_icon

2N5576

2N5575 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 70V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 80A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒

Detailed specifications: 2N5552-1 , 2N5552-2 , 2N5552-4 , 2N5559 , 2N556 , 2N5560 , 2N557 , 2N5575 , BC639 , 2N5577 , 2N5578 , 2N5579 , 2N558 , 2N5580 , 2N5581 , 2N5582 , 2N5583 .

Keywords - 2N5576 transistor specs

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