All Transistors. 2N5579 Datasheet

 

2N5579 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5579

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Base Voltage |Vcb|: 90 V

Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 60 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 0.4 MHz

Collector Capacitance (Cc): 2000 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO66

2N5579 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5579 Datasheet (PDF)

5.1. 2n5575.pdf Size:11K _semelab

2N5579

2N5575 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 70V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 80A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acco

Datasheet: 2N5559 , 2N556 , 2N5560 , 2N557 , 2N5575 , 2N5576 , 2N5577 , 2N5578 , SS8550 , 2N558 , 2N5580 , 2N5581 , 2N5582 , 2N5583 , 2N5583LP , 2N5584 , 2N5587 .

 

 
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