2N5579 Datasheet and Replacement

   Type Designator: 2N5579
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Base Voltage |Vcb|: 90 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 60 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 0.4 MHz
   Collector Capacitance (Cc): 2000 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO66
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