All Transistors. PBR951 Datasheet

 

PBR951 Datasheet and Replacement


   Type Designator: PBR951
   SMD Transistor Code: W2
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.365 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 1.5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT23
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PBR951 Datasheet (PDF)

 ..1. Size:115K  philips
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PBR951

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PBR951UHF wideband transistor1998 Aug 10Product specificationSupersedes data of 1998 Jun 09File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationUHF wideband transistor PBR951FEATURES PINNING - SOT23 Small sizePIN DESCRIPTION Low noise1 base Low distortion2 emitter

 ..2. Size:807K  kexin
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PBR951

SMD Type TransistorsNPN TransistorsPBR951 (KBR951)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=0.1A Collector Emitter Voltage VCEO=10V1 2 Gold metallization ensures excellent reliability.+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorCBE Absolute Maximum Ratings Ta = 25

 ..3. Size:1534K  jsmsemi
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PBR951

PBR951 NPN silicon epitaxial transistorDESCRIPTIONThe PBR951 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.MARKING:W2WFEATURES Low Noise and High GainNF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High Power GainMAG = 13 dB TYP. @VCE = 10 V,

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: PMBT2907AYS

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