PBR951 Datasheet, Equivalent, Cross Reference Search
Type Designator: PBR951
SMD Transistor Code: W2
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.365 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 8000 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT23
PBR951 Transistor Equivalent Substitute - Cross-Reference Search
PBR951 Datasheet (PDF)
pbr951.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PBR951UHF wideband transistor1998 Aug 10Product specificationSupersedes data of 1998 Jun 09File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationUHF wideband transistor PBR951FEATURES PINNING - SOT23 Small sizePIN DESCRIPTION Low noise1 base Low distortion2 emitter
pbr951.pdf
SMD Type TransistorsNPN TransistorsPBR951 (KBR951)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=0.1A Collector Emitter Voltage VCEO=10V1 2 Gold metallization ensures excellent reliability.+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorCBE Absolute Maximum Ratings Ta = 25
pbr951.pdf
PBR951 NPN silicon epitaxial transistorDESCRIPTIONThe PBR951 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.MARKING:W2WFEATURES Low Noise and High GainNF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High Power GainMAG = 13 dB TYP. @VCE = 10 V,
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
