PBR951 Datasheet. Specs and Replacement
Type Designator: PBR951 📄📄
SMD Transistor Code: W2
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.365 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 8000 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SOT23
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PBR951 datasheet
SMD Type Transistors NPN Transistors PBR951 (KBR951) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.1A Collector Emitter Voltage VCEO=10V 1 2 Gold metallization ensures excellent reliability. +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector C B E Absolute Maximum Ratings Ta = 25 ... See More ⇒
PBR951 NPN silicon epitaxial transistor DESCRIPTION The PBR951 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. MARKING W2W FEATURES Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High Power Gain MAG = 13 dB TYP. @VCE = 10 V, ... See More ⇒
Detailed specifications: PBLS6004D, PBLS6005D, PBLS6021D, PBLS6022D, PBLS6023D, PBLS6024D, PBR941, PBR941B, A940, PBRN113ET, PBRN113ZT, PBRN123ET, PBRN123YT, PBRP113ET, PBRP113ZT, PBRP123ET, PBRP123YT
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