2N564 Datasheet. Specs and Replacement

Type Designator: 2N564  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.12 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 0.3 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO5

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2N564 datasheet

 0.1. Size:126K  motorola

 2n5640.pdf pdf_icon

2N564

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5640/D JFETs Switching N Channel Depletion 2N5640 1 DRAIN 3 1 GATE 2 3 2 SOURCE CASE 29 04, STYLE 5 TO 92 (TO 226AA) Rating Symbol Value Unit Drain Source Voltage VDS 30 Vdc Drain Gate Voltage VDG 30 Vdc Reverse Gate Source Voltage VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissip... See More ⇒

 0.2. Size:14K  advanced-semi

 2n5643.pdf pdf_icon

2N564

2N5643 NPN SILICON RF POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .380 4L STUD The ASI 2N5643 is Designed for .112x45 A wideband large-signal amplifier stages in the 125 175 MHz range. C B E E FEATURES C B Minimum Gain = 7.6 dB Output Power = 40 W I D H Omnigold Metalization System J G #8-32 UNC-2A F MAXIMUM RATINGS E IC 5.0... See More ⇒

 0.3. Size:182K  ssm

 2n5641 2n5642 2n5643.pdf pdf_icon

2N564

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Detailed specifications: 2N5630, 2N5631, 2N5632, 2N5633, 2N5634, 2N5635, 2N5636, 2N5637, BC546, 2N5641, 2N5642, 2N5643, 2N5644, 2N5645, 2N5646, 2N565, 2N5650

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