2N564 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N564
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.3 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO5
2N564 Transistor Equivalent Substitute - Cross-Reference Search
2N564 Datasheet (PDF)
2n5640.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5640/DJFETs SwitchingN Channel Depletion2N56401 DRAIN31GATE 232 SOURCECASE 29 04, STYLE 5TO 92 (TO 226AA)Ra
2n5643.pdf
2N5643 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI 2N5643 is Designed for .112x45 A wideband large-signal amplifier stages in the 125 175 MHz range. C BE E FEATURES:C B Minimum Gain = 7.6 dB Output Power = 40 W IDH Omnigold Metalization System JG#8-32 UNC-2AFMAXIMUM RATINGS E IC 5.0
Datasheet: 2N5630 , 2N5631 , 2N5632 , 2N5633 , 2N5634 , 2N5635 , 2N5636 , 2N5637 , C3198 , 2N5641 , 2N5642 , 2N5643 , 2N5644 , 2N5645 , 2N5646 , 2N565 , 2N5650 .
