All Transistors. 2N5643 Datasheet

 

2N5643 Datasheet and Replacement


   Type Designator: 2N5643
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 175 MHz
   Collector Capacitance (Cc): 65 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO128
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2N5643 Datasheet (PDF)

 ..1. Size:14K  advanced-semi
 2n5643.pdf pdf_icon

2N5643

2N5643 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI 2N5643 is Designed for .112x45 A wideband large-signal amplifier stages in the 125 175 MHz range. C BE E FEATURES:C B Minimum Gain = 7.6 dB Output Power = 40 W IDH Omnigold Metalization System JG#8-32 UNC-2AFMAXIMUM RATINGS E IC 5.0

 ..2. Size:182K  ssm
 2n5641 2n5642 2n5643.pdf pdf_icon

2N5643

 9.1. Size:126K  motorola
 2n5640.pdf pdf_icon

2N5643

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5640/DJFETs SwitchingNChannel Depletion2N56401 DRAIN31GATE 232 SOURCECASE 2904, STYLE 5TO92 (TO226AA)Rating Symbol Value UnitDrainSource Voltage VDS 30 VdcDrainGate Voltage VDG 30 VdcReverse GateSource Voltage VGSR 30 VdcForward Gate Current IGF 10 mAdcTotal Device Dissip

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N5001S | 2N4359 | 2N5339X | 2N5666SM | 2N2673 | 2N1446 | 2SA1069

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