PEMB30 Datasheet. Specs and Replacement
Type Designator: PEMB30 📄📄
SMD Transistor Code: 2T
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SOT666
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PEMB30 datasheet
PEMB30; PUMB30 PNP/PNP double resistor-equipped transistors; R1 = 2.2 k , R2 = open Rev. 02 2 September 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages Table 1. Product overview Type number Package NPN/PNP NPN/NPN complement complement NXP JEITA PEMB30 SOT666 ... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB3 PNP resistor-equipped double transistor R1 = 4.7 k , R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor PEMB3 R1 = 4.7 k , R2 = open FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 ... See More ⇒
Detailed specifications: PEMB16, PEMB17, PEMB18, PEMB19, PEMB2, PEMB20, PEMB24, PEMB3, 2SC828, PEMB4, PEMB9, PEMD10, PEMD12, PEMD13, PEMD14, PEMD15, PEMD16
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