PEMB30 Datasheet, Equivalent, Cross Reference Search
Type Designator: PEMB30
SMD Transistor Code: 2T
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT666
PEMB30 Transistor Equivalent Substitute - Cross-Reference Search
PEMB30 Datasheet (PDF)
pemb30 pumb30.pdf
PEMB30; PUMB30PNP/PNP double resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 02 2 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)plastic packagesTable 1. Product overviewType number Package NPN/PNP NPN/NPNcomplement complementNXP JEITAPEMB30 SOT666
pemb3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D744PEMB3PNP resistor-equipped doubletransistor R1 = 4.7 k, R2 = openPreliminary specification 2001 Sep 14Philips Semiconductors Preliminary specificationPNP resistor-equipped double transistorPEMB3R1 = 4.7 k, R2 = openFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
