PEMD6 Datasheet. Specs and Replacement

Type Designator: PEMD6  📄📄 

SMD Transistor Code: D6

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 4.7 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT666

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PEMD6 datasheet

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PEMD6

DISCRETE SEMICONDUCTORS DATA SHEET PEMD6; PUMD6 NPN/PNP resistor-equipped transistors; R1 = 4.7 k , R2 = open Product data sheet 2004 Apr 07 Supersedes data of 2003 Nov 04 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; PEMD6; PUMD6 R1 = 4.7 k , R2 = open FEATURES DESCRIPTION Built-in bias resistors NPN/PNP resistor-equipped transistors (see... See More ⇒

Detailed specifications: PEMD19, PEMD2, PEMD20, PEMD24, PEMD3, PEMD30, PEMD4, PEMD48, 2N2222, PEMD9, PEMF21, PEMH1, PEMH10, PEMH11, PEMH13, PEMH14, PEMH15

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