All Transistors. PUMH30 Datasheet

 

PUMH30 Datasheet and Replacement


   Type Designator: PUMH30
   SMD Transistor Code: *B1
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT363
 

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PUMH30 Datasheet (PDF)

 ..1. Size:72K  philips
 pemh30 pumh30.pdf pdf_icon

PUMH30

PEMH30; PUMH30NPN/NPN double resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 01 28 March 2006 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double Resistor-Equipped Transistors (RET) in Surface Mounted Device (SMD)plastic packages.Table 1. Product overviewType number Package NPN/PNP PNP/PNPcomplement complementPhilips JEITAPEMH30 SOT66

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

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