PUMH30 Datasheet. Specs and Replacement

Type Designator: PUMH30  📄📄 

SMD Transistor Code: *B1

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT363

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PUMH30 datasheet

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PUMH30

PEMH30; PUMH30 NPN/NPN double resistor-equipped transistors; R1 = 2.2 k , R2 = open Rev. 01 28 March 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors (RET) in Surface Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NPN/PNP PNP/PNP complement complement Philips JEITA PEMH30 SOT66... See More ⇒

Detailed specifications: PUMH15, PUMH16, PUMH17, PUMH18, PUMH19, PUMH2, PUMH20, PUMH24, 2SA1837, PUMH4, PUMH7, PUMH9, PUML1, PUMT1, PUMX1, PUMZ1, PXT2222A

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