STN83003 Datasheet. Specs and Replacement

Type Designator: STN83003  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.6 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 4

Noise Figure, dB: -

Package: SOT223

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STN83003 datasheet

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STN83003

STN83003 High voltage fast-switching NPN power transistor Features High voltage capability Very high switching speed 4 3 Application 2 1 Electronics ballasts for fluorescent lighting SOT-223 Description The device is manufactured using high voltage multi-epitaxial planar technology for high I switching speeds and high voltage capability. It uses a cellular emit... See More ⇒

Detailed specifications: STL72, STL73, STL73D, STN690A, STN715, STN724, STN790A, STN817A, 2N3904, STN851, STN851A, STN878, STN888, STN9260, STN93003, STN951, STP03D200

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