All Transistors. STN83003 Datasheet

 

STN83003 Datasheet and Replacement


   Type Designator: STN83003
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.6 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 4
   Noise Figure, dB: -
   Package: SOT223
 

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STN83003 Datasheet (PDF)

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STN83003

STN83003High voltage fast-switchingNPN power transistorFeatures High voltage capability Very high switching speed 43Application21 Electronics ballasts for fluorescent lightingSOT-223 DescriptionThe device is manufactured using high voltage multi-epitaxial planar technology for high Iswitching speeds and high voltage capability. It uses a cellular emit

Datasheet: STL72 , STL73 , STL73D , STN690A , STN715 , STN724 , STN790A , STN817A , 2N3055 , STN851 , STN851A , STN878 , STN888 , STN9260 , STN93003 , STN951 , STP03D200 .

History: TIP47 | CHEMG6GP | CHDTC124TUGP

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