RN1444 Datasheet. Specs and Replacement

Type Designator: RN1444  📄📄 

SMD Transistor Code: CA_CB

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 25 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 4.8 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT346 SC59 SMINI

  📄📄 Copy 

 RN1444 Substitution

- BJT ⓘ Cross-Reference Search

 

RN1444 datasheet

 9.1. Size:190K  toshiba

 rn1441-1444.pdf pdf_icon

RN1444

RN1441 RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm High emitter-base voltage VEBO = 25V (min) High reverse h reverse h = 150 (typ.) (V = -2V, I = -4mA) FE FE CE C Low on resistance R = 1 (typ.) (I = 5mA) ON B With built-in bias resistors Simplify circuit design ... See More ⇒

Detailed specifications: RN1423, RN1424, RN1425, RN1426, RN1427, RN1441, RN1442, RN1443, D882P, RN1501, RN1502, RN1503, RN1504, RN1505, RN1506, RN1507, RN1508

Keywords - RN1444 pdf specs

 RN1444 cross reference

 RN1444 equivalent finder

 RN1444 pdf lookup

 RN1444 substitution

 RN1444 replacement