RN1605 Datasheet, Equivalent, Cross Reference Search
Type Designator: RN1605
SMD Transistor Code: XE
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT26
SC74
SM6
RN1605 Transistor Equivalent Substitute - Cross-Reference Search
RN1605 Datasheet (PDF)
rn1601-rn1606.pdf
RN1601~RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1601,RN1602,RN1603 RN1604,RN1605,RN1606 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
rn1607-rn1609.pdf
RN1607~RN1609 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1607,RN1608,RN1609 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to R
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
