RN1611 Datasheet and Replacement
Type Designator: RN1611
SMD Transistor Code: XM
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT26 SC74 SM6
RN1611 Substitution
RN1611 Datasheet (PDF)
rn1610-rn1611.pdf

RN1610,RN1611 TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) RN1610,RN1611 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2610, R
Datasheet: RN1603 , RN1604 , RN1605 , RN1606 , RN1607 , RN1608 , RN1609 , RN1610 , D882 , RN1673 , RN16J1 , RN1701JE , RN1701 , RN1702JE , RN1702 , RN1703JE , RN1703 .
History: 2SC2751
Keywords - RN1611 transistor datasheet
RN1611 cross reference
RN1611 equivalent finder
RN1611 lookup
RN1611 substitution
RN1611 replacement
History: 2SC2751



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