All Transistors. RN1611 Datasheet

 

RN1611 Datasheet and Replacement


   Type Designator: RN1611
   SMD Transistor Code: XM
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT26 SC74 SM6
 

 RN1611 Substitution

   - BJT ⓘ Cross-Reference Search

   

RN1611 Datasheet (PDF)

 0.1. Size:116K  toshiba
 rn1610-rn1611.pdf pdf_icon

RN1611

RN1610,RN1611 TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) RN1610,RN1611 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2610, R

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

Keywords - RN1611 transistor datasheet

 RN1611 cross reference
 RN1611 equivalent finder
 RN1611 lookup
 RN1611 substitution
 RN1611 replacement

 

 
Back to Top

 


 
.