All Transistors. RN1611 Datasheet

 

RN1611 Datasheet and Replacement


   Type Designator: RN1611
   SMD Transistor Code: XM
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT26 SC74 SM6

 RN1611 Transistor Equivalent Substitute - Cross-Reference Search

   

RN1611 Datasheet (PDF)

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RN1611

RN1610,RN1611 TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) RN1610,RN1611 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2610, R... See More ⇒

Datasheet: RN1603 , RN1604 , RN1605 , RN1606 , RN1607 , RN1608 , RN1609 , RN1610 , BC337 , RN1673 , RN16J1 , RN1701JE , RN1701 , RN1702JE , RN1702 , RN1703JE , RN1703 .

History: K2109B | MJD361T4-A | 2SA776A | JC556B | 2SA811AC15 | 2SC3468E | RN1710

Keywords - RN1611 transistor datasheet

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