All Transistors. RN16J1 Datasheet

 

RN16J1 Datasheet and Replacement


   Type Designator: RN16J1
   SMD Transistor Code: 80
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT26 SC74 SM6
 

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RN16J1 Datasheet (PDF)

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RN16J1

RN16J1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN16J1 Muting Applications Unit in mmSwitching Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Equivalent Circuit C R1 B 1.BASE1 (B1)2.EMITTER1 (E1) 3.COLLECTOR2 (C2) E 4.BASE2 (B2) 5.EMITTER2 (E2) 6.COLECTOR1 (C1)

Datasheet: RN1605 , RN1606 , RN1607 , RN1608 , RN1609 , RN1610 , RN1611 , RN1673 , BC337 , RN1701JE , RN1701 , RN1702JE , RN1702 , RN1703JE , RN1703 , RN1704JE , RN1704 .

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