RN16J1 Datasheet. Specs and Replacement

Type Designator: RN16J1  📄📄 

SMD Transistor Code: 80

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: SOT26 SC74 SM6

  📄📄 Copy 

 RN16J1 Substitution

- BJT ⓘ Cross-Reference Search

 

RN16J1 datasheet

 ..1. Size:178K  toshiba

 rn16j1 090414.pdf pdf_icon

RN16J1

RN16J1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN16J1 Muting Applications Unit in mm Switching Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Equivalent Circuit C R1 B 1.BASE1 (B1) 2.EMITTER1 (E1) 3.COLLECTOR2 (C2) E 4.BASE2 (B2) 5.EMITTER2 (E2) 6.COLECTOR1 (C1)... See More ⇒

Detailed specifications: RN1605, RN1606, RN1607, RN1608, RN1609, RN1610, RN1611, RN1673, 2SA1943, RN1701JE, RN1701, RN1702JE, RN1702, RN1703JE, RN1703, RN1704JE, RN1704

Keywords - RN16J1 pdf specs

 RN16J1 cross reference

 RN16J1 equivalent finder

 RN16J1 pdf lookup

 RN16J1 substitution

 RN16J1 replacement