RN2511 Datasheet. Specs and Replacement

Type Designator: RN2511  📄📄 

SMD Transistor Code: YM

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT25 SC74A SMV

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RN2511 datasheet

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RN2511

RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2510,RN2511 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including twodevices in SMV (super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1510, RN... See More ⇒

Detailed specifications: RN2503, RN2504, RN2505, RN2506, RN2507, RN2508, RN2509, RN2510, 2SC828, RN2601, RN2602, RN2603, RN2604, RN2605, RN2606, RN2607, RN2608

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