RN2511 Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2511
SMD Transistor Code: YM
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT25 SC74A SMV
RN2511 Transistor Equivalent Substitute - Cross-Reference Search
RN2511 Datasheet (PDF)
0.1. Size:112K toshiba
rn2510-rn2511.pdf
rn2510-rn2511.pdf
RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2510,RN2511 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including twodevices in SMV (super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1510, RN
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
