All Transistors. 2N5795 Datasheet

 

2N5795 Datasheet and Replacement


   Type Designator: 2N5795
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO77
 

 2N5795 Substitution

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2N5795 Datasheet (PDF)

 0.1. Size:127K  microsemi
2n5795-96.pdf pdf_icon

2N5795

TECHNICAL DATAPNP DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/496 Devices Qualified LevelJAN 2N5796 2N5795 JANTX 2N5796U JANTXV MAXIMUM RATINGS Ratings Symbol Value UnitsCollector-Emitter Voltage 60 VdcVCEO Collector-Base Voltage 60 VdcVCBO Emitter-Base Voltage 5.0 VdcVEBO TO-78* Collector Current 600 mAdcIC Both(2) One(1) Section Sections

 9.2. Size:67K  central
2n5793 2n5794.pdf pdf_icon

2N5795

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.3. Size:262K  optek
2n5794u.pdf pdf_icon

2N5795

Product Bulletin JANTX, JANTXV, 2N5794USeptember 1996Surface Mount Dual NPN TransistorType JANTX, JANTXV, 2N5794U.058 (1.47)FeaturesAbsolute Maximum Ratings (TA = 25o C unless otherwise noted)Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 VHermetically sealed Collector-Base V

Datasheet: 2N5784 , 2N5784SM , 2N5785 , 2N5785SM , 2N5786 , 2N579 , 2N5793 , 2N5794 , 2SA1015 , 2N5796 , 2N580 , 2N5804 , 2N5805 , 2N581 , 2N5810 , 2N5811 , 2N5812 .

History: LT5817 | 2SB562 | S8550A | BD363A | 2SC4455 | C6 | NTE2542

Keywords - 2N5795 transistor datasheet

 2N5795 cross reference
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