2N580 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N580
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 6 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO5
2N580 Transistor Equivalent Substitute - Cross-Reference Search
2N580 Datasheet (PDF)
2n5804 2n5805.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5804 2N5805 DESCRIPTION With TO-3 package High breakdown APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETE
2n5804 2n5805.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5804 2N5805 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
