TPC6701 Datasheet and Replacement
Type Designator: TPC6701
SMD Transistor Code: H4A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 400
Noise Figure, dB: -
Package: VS6
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TPC6701 Datasheet (PDF)
tpc6701.pdf

TPC6701 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type TPC6701 High-Speed Switching Applications Unit: mmMotor Drive Applications Inverter Lighting Applications Two NPN transistors are mounted on a compact and slim package. High DC current gain: hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) High-s
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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