TPC6701 Datasheet, Equivalent, Cross Reference Search
Type Designator: TPC6701
SMD Transistor Code: H4A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 400
Noise Figure, dB: -
Package: VS6
TPC6701 Transistor Equivalent Substitute - Cross-Reference Search
TPC6701 Datasheet (PDF)
tpc6701.pdf
TPC6701 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type TPC6701 High-Speed Switching Applications Unit: mmMotor Drive Applications Inverter Lighting Applications Two NPN transistors are mounted on a compact and slim package. High DC current gain: hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) High-s
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .