All Transistors. TPC6D03 Datasheet

 

TPC6D03 Datasheet and Replacement


   Type Designator: TPC6D03
   SMD Transistor Code: H8C
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 9.5 V
   Maximum Collector Current |Ic max|: 1.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: VS6
 

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TPC6D03 Datasheet (PDF)

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TPC6D03

TPC6D03 TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode TPC6D03 High-Speed Switching Applications DC-DC Converter Applications Unit: mm A PNP transistor and a Schottky barrier diode are housed on a compact and slim package. Absolute Maximum Ratings Transistor (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -20 V

Datasheet: TPC6502 , TPC6503 , TPC6504 , TPC6601 , TPC6602 , TPC6603 , TPC6604 , TPC6701 , 2SD669 , TPCP8501 , TPCP8504 , TPCP8505 , TPCP8507 , TPCP8510 , TPCP8511 , TPCP8601 , TPCP8602 .

History: NSS1C301E | CHUMG4GP | 2SC5345UF

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