All Transistors. TPC6D03 Datasheet

 

TPC6D03 Datasheet, Equivalent, Cross Reference Search


   Type Designator: TPC6D03
   SMD Transistor Code: H8C
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 9.5 V
   Maximum Collector Current |Ic max|: 1.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: VS6

 TPC6D03 Transistor Equivalent Substitute - Cross-Reference Search

   

TPC6D03 Datasheet (PDF)

 ..1. Size:184K  toshiba
 tpc6d03.pdf

TPC6D03 TPC6D03

TPC6D03 TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode TPC6D03 High-Speed Switching Applications DC-DC Converter Applications Unit: mm A PNP transistor and a Schottky barrier diode are housed on a compact and slim package. Absolute Maximum Ratings Transistor (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -20 V

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

 

 
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