TPC6D03 Datasheet. Specs and Replacement

Type Designator: TPC6D03  📄📄 

SMD Transistor Code: H8C

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 9.5 V

Maximum Collector Current |Ic max|: 1.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: VS6

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TPC6D03 datasheet

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TPC6D03

TPC6D03 TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode TPC6D03 High-Speed Switching Applications DC-DC Converter Applications Unit mm A PNP transistor and a Schottky barrier diode are housed on a compact and slim package. Absolute Maximum Ratings Transistor (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V ... See More ⇒

Detailed specifications: TPC6502, TPC6503, TPC6504, TPC6601, TPC6602, TPC6603, TPC6604, TPC6701, TIP2955, TPCP8501, TPCP8504, TPCP8505, TPCP8507, TPCP8510, TPCP8511, TPCP8601, TPCP8602

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