TPC6D03 Datasheet and Replacement
Type Designator: TPC6D03
SMD Transistor Code: H8C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 9.5 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: VS6
- BJT Cross-Reference Search
TPC6D03 Datasheet (PDF)
tpc6d03.pdf

TPC6D03 TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode TPC6D03 High-Speed Switching Applications DC-DC Converter Applications Unit: mm A PNP transistor and a Schottky barrier diode are housed on a compact and slim package. Absolute Maximum Ratings Transistor (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -20 V
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: BCP627A | TP9380 | BC860AW | BCP5401 | TP918 | BD810G | BD678AG
Keywords - TPC6D03 transistor datasheet
TPC6D03 cross reference
TPC6D03 equivalent finder
TPC6D03 lookup
TPC6D03 substitution
TPC6D03 replacement
History: BCP627A | TP9380 | BC860AW | BCP5401 | TP918 | BD810G | BD678AG



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irf9540n | bd139 datasheet | irf9640 | 2n3053 | a1015 | mpsa42 | 2n5551 transistor | a1015 transistor