TPCP8511 Datasheet. Specs and Replacement

Type Designator: TPCP8511  📄📄 

SMD Transistor Code: 8511

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.25 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 18 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: PS8

  📄📄 Copy 

 TPCP8511 Substitution

- BJT ⓘ Cross-Reference Search

 

TPCP8511 datasheet

 ..1. Size:184K  toshiba

 tpcp8511.pdf pdf_icon

TPCP8511

TPCP8511 Bipolar Transistors Silicon NPN Epitaxial Type TPCP8511 TPCP8511 TPCP8511 TPCP8511 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching DC-DC Converters Photo Flashes 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 250 to 400 (IC = 0.3 A) (2) Low collector-emitter saturation VCE(sat) = 0.18 V... See More ⇒

 7.1. Size:211K  toshiba

 tpcp8510.pdf pdf_icon

TPCP8511

TPCP8510 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8510 Unit mm High-Speed, High-Voltage Switching Applications 0.33 0.05 DC-DC Converter Applications 0.05 M A 8 5 High DC current gain hFE = 120 to 300 (IC = 0.1 A) Low collector-emitter saturation VCE (sat) = 0.14 V (max) 0.475 1 4 High-speed switching tf = 0.2 s (typ) B 0.05 M B 0.65 2.9 0.1... See More ⇒

 8.1. Size:227K  toshiba

 tpcp8501.pdf pdf_icon

TPCP8511

TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 100 to 300 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.2 V (max) High-speed switching tf = 100 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 Absolute Maximum Ratings (Ta =... See More ⇒

 8.2. Size:210K  toshiba

 tpcp8505.pdf pdf_icon

TPCP8511

TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TPCP8505 High-Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.14 V (max) High-speed switching tf = 120 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 Absolu... See More ⇒

SHOW MORE

Detailed specifications: TPC6604, TPC6701, TPC6D03, TPCP8501, TPCP8504, TPCP8505, TPCP8507, TPCP8510, 2SD669, TPCP8601, TPCP8602, TPCP8603, TPCP8604, TPCP8701, TPCP8901, TPCP8H01, TPCP8H02

Keywords - TPCP8511 pdf specs

 TPCP8511 cross reference

 TPCP8511 equivalent finder

 TPCP8511 pdf lookup

 TPCP8511 substitution

 TPCP8511 replacement