TPCP8511 Todos los transistores

 ..1. Size:184K  toshiba
 tpcp8511.pdf

TPCP8511 Bipolar Transistors Silicon NPN Epitaxial Type TPCP8511 TPCP8511 TPCP8511 TPCP8511 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching DC-DC Converters Photo Flashes 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 250 to 400 (IC = 0.3 A) (2) Low collector-emitter saturation VCE(sat) = 0.18 V

 7.1. Size:211K  toshiba
 tpcp8510.pdf

TPCP8510 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8510 Unit mm High-Speed, High-Voltage Switching Applications 0.33 0.05 DC-DC Converter Applications 0.05 M A 8 5 High DC current gain hFE = 120 to 300 (IC = 0.1 A) Low collector-emitter saturation VCE (sat) = 0.14 V (max) 0.475 1 4 High-speed switching tf = 0.2 s (typ) B 0.05 M B 0.65 2.9 0.1

 8.1. Size:227K  toshiba
 tpcp8501.pdf

TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 100 to 300 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.2 V (max) High-speed switching tf = 100 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 Absolute Maximum Ratings (Ta =

 8.2. Size:210K  toshiba
 tpcp8505.pdf

TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TPCP8505 High-Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.14 V (max) High-speed switching tf = 120 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 Absolu

 8.3. Size:171K  toshiba
 tpcp8507.pdf

TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit mm DC/DC Converters 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 120 300 (IC = 0.1 A) Low collector-emitter saturation voltage VCE(sat) = 0.14 V (max) High-speed switching tf = 0.2 s (typ.) 0.475 1 4 B 0.05 M B 0.65 2.9 0.1 Absolute Maximum

 8.4. Size:196K  toshiba
 tpcp8504.pdf

TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 5 8 High DC current gain hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation VCE (sat) = 0.12 V (max) High-speed switching tf = 25 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 2.9 0.1 A 0