MT3S35FS Datasheet, Equivalent, Cross Reference Search
Type Designator: MT3S35FS
SMD Transistor Code: 20
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 8 V
Maximum Collector-Emitter Voltage |Vce|: 4.5 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.024 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20000 MHz
Collector Capacitance (Cc): 0.3 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: FSM
MT3S35FS Transistor Equivalent Substitute - Cross-Reference Search
MT3S35FS Datasheet (PDF)
mt3s35fs.pdf
MT3S35FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S35FS VCO Oscillator Stage Unit: mmUHF Low-Noise Amplifier Application 1.00.050.80.05Features Low Noise Figure: NF = 1.4 dB (@ f = 2 GHz) 1 High Gain: |S21e|2 = 13.0 dB (@ f = 2 GHz) 32 0.10.05 0.10.05Marking 23 2 0 1Absolute Maximum Ratings (Ta = 25C) 1.BASE Characte
mt3s37fs.pdf
MT3S37FS TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S37FS VCO OSCILLETOR STAGE Unit:mmUHF LOW NOISE AMPLIFIER APPLICATION 1.00.050.80.05FEATURES Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e|2=12.0dB (@f=2GHz) 1 32 0.10.05 0.10.05Marking 23 2 2 1Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit 1.BAS
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
