All Transistors. MT3S35FS Datasheet

 

MT3S35FS Datasheet and Replacement


   Type Designator: MT3S35FS
   SMD Transistor Code: 20
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 8 V
   Maximum Collector-Emitter Voltage |Vce|: 4.5 V
   Maximum Emitter-Base Voltage |Veb|: 1.5 V
   Maximum Collector Current |Ic max|: 0.024 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20000 MHz
   Collector Capacitance (Cc): 0.3 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: FSM
 

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MT3S35FS Datasheet (PDF)

 ..1. Size:130K  toshiba
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MT3S35FS

MT3S35FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S35FS VCO Oscillator Stage Unit: mmUHF Low-Noise Amplifier Application 1.00.050.80.05Features Low Noise Figure: NF = 1.4 dB (@ f = 2 GHz) 1 High Gain: |S21e|2 = 13.0 dB (@ f = 2 GHz) 32 0.10.05 0.10.05Marking 23 2 0 1Absolute Maximum Ratings (Ta = 25C) 1.BASE Characte

 9.1. Size:122K  toshiba
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MT3S35FS

MT3S37FS TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S37FS VCO OSCILLETOR STAGE Unit:mmUHF LOW NOISE AMPLIFIER APPLICATION 1.00.050.80.05FEATURES Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e|2=12.0dB (@f=2GHz) 1 32 0.10.05 0.10.05Marking 23 2 2 1Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit 1.BAS

Datasheet: MT3S19 , MT3S19R , MT3S19TU , MT3S20P , MT3S20R , MT3S20TU , MT3S21P , MT3S22P , S8550 , MT3S37FS , MT3S41FS , MT4S03A , MT4S03AU , MT4S03BU , MT4S06U , MT4S23U , MT4S24U .

History: NSBC114TDP6T5G | CENU45 | DME20B01

Keywords - MT3S35FS transistor datasheet

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