MT4S03BU Datasheet. Specs and Replacement
Type Designator: MT4S03BU 📄📄
SMD Transistor Code: MR
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.175 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 5 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 12000 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: USQ
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MT4S03BU datasheet
MT4S03BU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03BU Unit mm VHF UHF Band Low Noise Amplifier Applications Low Noise Figure NF = 1.6dB (Typ.) (@f = 2GHz) High Gain S21e 2 = 9dB (Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25 C) 1.Emitter1(E1) 2.Collector(C) Characteristic Symbol Unit Rating 3.Emitter2(E2) 4.Base(B) Collector-base ... See More ⇒
MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.4dB (f = 2 GHz) High gain Gain = 9dB (f = 2 GHz) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 2 V ... See More ⇒
Detailed specifications: MT3S20TU, MT3S21P, MT3S22P, MT3S35FS, MT3S37FS, MT3S41FS, MT4S03A, MT4S03AU, 8050, MT4S06U, MT4S23U, MT4S24U, 2SB1015A, 2SB1016A, 2SB1018A, 2SB1020A, 2SB1594
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