All Transistors. MT4S03BU Datasheet

 

MT4S03BU Datasheet and Replacement


   Type Designator: MT4S03BU
   SMD Transistor Code: MR
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.175 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 5 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.04 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 12000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: USQ
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MT4S03BU Datasheet (PDF)

 ..1. Size:186K  toshiba
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MT4S03BU

MT4S03BU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03BU Unit: mmVHF~UHF Band Low Noise Amplifier Applications Low Noise Figure: NF = 1.6dB (Typ.) (@f = 2GHz) High Gain: |S21e|2 = 9dB (Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25C) 1.Emitter1(E1) 2.Collector(C) Characteristic Symbol Unit Rating 3.Emitter2(E2) 4.Base(B) Collector-base

 8.1. Size:102K  toshiba
 mt4s03au.pdf pdf_icon

MT4S03BU

 8.2. Size:102K  toshiba
 mt4s03a.pdf pdf_icon

MT4S03BU

MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: Gain = 9dB (f = 2 GHz) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 10 VCollector-emitter voltage VCEO 5 VEmitter-base voltage VEBO 2 V

 9.1. Size:110K  toshiba
 mt4s06u.pdf pdf_icon

MT4S03BU

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: RT2P01M | TSB1412CP | CTP1732 | DTA114TMFHA | 2SC3489 | CP502 | UN2123

Keywords - MT4S03BU transistor datasheet

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