2N5829 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5829
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1200 MHz
Collector Capacitance (Cc): 0.8 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO72
2N5829 Transistor Equivalent Substitute - Cross-Reference Search
2N5829 Datasheet (PDF)
9.2. Size:47K central
2n5820 2n5821 2n5822 2n5823.pdf
2n5820 2n5821 2n5822 2n5823.pdf
TM2N5820 2N5822 NPNCentral2N5821 2N5823 PNPSemiconductor Corp.COMPLEMENTARYSILICON TRANSISTORSDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N5820 seriestypes are epoxy molded complementary siliconsmall signal transistors manufactured by theepitaxial planar process designed for generalpurpose amplifier applications where a highcollector current rating is required.MARKING COD
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
