2N5829 Datasheet. Specs and Replacement

Type Designator: 2N5829  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1200 MHz

Collector Capacitance (Cc): 0.8 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO72

  📄📄 Copy 

 2N5829 Substitution

- BJT ⓘ Cross-Reference Search

 

2N5829 datasheet

 9.1. Size:218K  rca

 2n582.pdf pdf_icon

2N5829

... See More ⇒

 9.2. Size:47K  central

 2n5820 2n5821 2n5822 2n5823.pdf pdf_icon

2N5829

TM 2N5820 2N5822 NPN Central 2N5821 2N5823 PNP Semiconductor Corp. COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5820 series types are epoxy molded complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier applications where a high collector current rating is required. MARKING COD... See More ⇒

 9.3. Size:138K  microelectronics

 2n5820-23.pdf pdf_icon

2N5829

... See More ⇒

Detailed specifications: 2N5823, 2N5824, 2N5825, 2N5826, 2N5827, 2N5827A, 2N5828, 2N5828A, C945, 2N583, 2N5830, 2N5831, 2N5832, 2N5833, 2N5834, 2N5835, 2N5836

Keywords - 2N5829 pdf specs

 2N5829 cross reference

 2N5829 equivalent finder

 2N5829 pdf lookup

 2N5829 substitution

 2N5829 replacement