DTB513ZE Datasheet. Specs and Replacement

Type Designator: DTB513ZE  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 260 MHz

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: EMT3

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DTB513ZE datasheet

 ..1. Size:69K  rohm

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DTB513ZE

DTB513ZE / DTB513ZM Transistors -500mA / -12V Low VCE(sat) Digital transistors (with built-in resistors) DTB513ZE / DTB513ZM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTB513ZE 1.6 0.7 0.3 0.55 Feature ( ) 3 1) VCE (sat) is lower than conventional products. ( ) ( ) 2 1 2) Built-in bias resistors enable the configuration of an 0.2 0.2 0.15 (1) GND... See More ⇒

Detailed specifications: DTA143ZUB, DTA144EEB, DTA144EM, DTA144EUB, DTA144WE, DTB113ZK, DTB123YK, DTB123YU, 2SC945, DTB513ZM, DTB523YE, DTB523YM, DTB543EE, DTB543EM, DTB543XE, DTB543XM, DTB543ZE

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