All Transistors. DTB513ZE Datasheet

 

DTB513ZE Datasheet and Replacement


   Type Designator: DTB513ZE
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 260 MHz
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: EMT3
 

 DTB513ZE Substitution

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DTB513ZE Datasheet (PDF)

 ..1. Size:69K  rohm
 dtb513ze-zm dtb513ze.pdf pdf_icon

DTB513ZE

DTB513ZE / DTB513ZMTransistors-500mA / -12V Low VCE(sat) Digital transistors (with built-in resistors) DTB513ZE / DTB513ZM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTB513ZE1.6 0.70.3 0.55 Feature ( )31) VCE (sat) is lower than conventional products. ( ) ( )2 12) Built-in bias resistors enable the configuration of an 0.2 0.20.15(1) GND

Datasheet: DTA143ZUB , DTA144EEB , DTA144EM , DTA144EUB , DTA144WE , DTB113ZK , DTB123YK , DTB123YU , 2SC2655 , DTB513ZM , DTB523YE , DTB523YM , DTB543EE , DTB543EM , DTB543XE , DTB543XM , DTB543ZE .

Keywords - DTB513ZE transistor datasheet

 DTB513ZE cross reference
 DTB513ZE equivalent finder
 DTB513ZE lookup
 DTB513ZE substitution
 DTB513ZE replacement

 

 
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