All Transistors. KT8296G Datasheet

 

KT8296G Datasheet and Replacement


   Type Designator: KT8296G
   SMD Transistor Code: КТ8296Г
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: KT27

 KT8296G Transistor Equivalent Substitute - Cross-Reference Search

   

KT8296G Datasheet (PDF)

 9.1. Size:33K  no
 kt829a.pdf pdf_icon

KT8296G

n-p-n, 829 Ik max,A 8 Uo (U max)[Ur max],B100 U max,B 100 P max(P max), 60 T max,C 150 h21(h21)[S21 ] 750 U(U),B 3 I(I),A 3 U ,B 2 I(IR), 1500 f(fh21), 4 R -(R -),/ 2.08 ... See More ⇒

 9.2. Size:713K  russia
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KT8296G

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 9.3. Size:213K  inchange semiconductor
 kt829a.pdf pdf_icon

KT8296G

isc Silicon NPN Darlington Power Transistor KT829A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 3A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE... See More ⇒

Datasheet: KT8271B , KT8271V , KT8272A , KT8272B , KT8272V , KT8290A , KT8296A , KT8296B , 2SC828 , KT8296V , KT8297A , KT8297B , KT8297G , KT8297V , KT8301A-5 , KT8304A , KT8304A-5 .

History: AC552 | SUR538J | KRC653U | KRC661E | UN6219 | KF2000 | MT0493

Keywords - KT8296G transistor datasheet

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