KT8296G Datasheet. Specs and Replacement

Type Designator: KT8296G  📄📄 

SMD Transistor Code: КТ8296Г

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: KT27

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KT8296G datasheet

 9.1. Size:33K  no

 kt829a.pdf pdf_icon

KT8296G

n-p-n, 829 Ik max,A 8 Uo (U max)[Ur max],B100 U max,B 100 P max(P max), 60 T max,C 150 h21(h21)[S21 ] 750 U(U),B 3 I(I),A 3 U ,B 2 I(IR), 1500 f(fh21), 4 R -(R -),/ 2.08 ... See More ⇒

 9.2. Size:713K  russia

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KT8296G

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 9.3. Size:213K  inchange semiconductor

 kt829a.pdf pdf_icon

KT8296G

isc Silicon NPN Darlington Power Transistor KT829A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 3A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE... See More ⇒

Detailed specifications: KT8271B, KT8271V, KT8272A, KT8272B, KT8272V, KT8290A, KT8296A, KT8296B, 2SC828, KT8296V, KT8297A, KT8297B, KT8297G, KT8297V, KT8301A-5, KT8304A, KT8304A-5

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