BU2725DX Datasheet, Equivalent, Cross Reference Search
Type Designator: BU2725DX
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 1700 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7.5 V
Maximum Collector Current |Ic max|: 12 A
Forward Current Transfer Ratio (hFE), MIN: 3.8
Noise Figure, dB: -
Package: TO3PML
BU2725DX Transistor Equivalent Substitute - Cross-Reference Search
BU2725DX Datasheet (PDF)
bu2725dx 2.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontaldeflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCES
bu2725dx 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontaldeflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCES
bu2725dx.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2725DX DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(VBE= 0) 1700 V VEBO Em
bu2725df 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontaldeflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCES
bu2725df.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2725DF DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(VBE= 0) 1700 V VEBO Em
bu2725dw.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2725DW DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(VBE= 0) 1700 V VEBO Em
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
