BU2725DX Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU2725DX  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45 W

Tensión colector-base (Vcb): 1700 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 7.5 V

Corriente del colector DC máxima (Ic): 12 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 3.8

Encapsulados: TO3PML

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BU2725DX datasheet

 ..1. Size:63K  philips
 bu2725dx 2.pdf pdf_icon

BU2725DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCES

 ..2. Size:53K  philips
 bu2725dx 1.pdf pdf_icon

BU2725DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCES

 ..3. Size:79K  inchange semiconductor
 bu2725dx.pdf pdf_icon

BU2725DX

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2725DX DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1700 V VEBO Em

 7.1. Size:52K  philips
 bu2725df 1.pdf pdf_icon

BU2725DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCES

MOSTRAR MÁS

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