BU2725DX Todos los transistores

 

BU2725DX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU2725DX
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 45 W
   Tensión colector-base (Vcb): 1700 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 7.5 V
   Corriente del colector DC máxima (Ic): 12 A

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 3.8
   Paquete / Cubierta: TO3PML
     - Selección de transistores por parámetros

 

BU2725DX Datasheet (PDF)

 ..1. Size:63K  philips
bu2725dx 2.pdf pdf_icon

BU2725DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontaldeflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCES

 ..2. Size:53K  philips
bu2725dx 1.pdf pdf_icon

BU2725DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontaldeflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCES

 ..3. Size:79K  inchange semiconductor
bu2725dx.pdf pdf_icon

BU2725DX

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2725DX DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(VBE= 0) 1700 V VEBO Em

 7.1. Size:52K  philips
bu2725df 1.pdf pdf_icon

BU2725DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontaldeflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCES

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: FZTA92 | 2N6208 | PTB20174 | 2N3144 | 2SC2605 | 2N2554 | NSBC123EDXV6

 

 
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