All Transistors. BUH417D Datasheet

 

BUH417D Datasheet and Replacement


   Type Designator: BUH417D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 55 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 7 A
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO3PML
 

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BUH417D Datasheet (PDF)

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BUH417D

isc Silicon NPN Power Transistors BUH417DDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Integrated DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

Datasheet: BU2727AW , BU2727DF , BU508AW , BU508AX , BU508DW , BU508DX , BUF405AFP , BUH1015HI , 2SC1815 , BUH713 , BUH715AF , BUL6825 , BUT12AX , BUT56AF , BUW13AW , BUW13W , T06 .

History: 2SB750

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