All Transistors. BUH417D Datasheet

 

BUH417D Datasheet and Replacement


   Type Designator: BUH417D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 55 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 7 A
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO3PML
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BUH417D Datasheet (PDF)

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BUH417D

isc Silicon NPN Power Transistors BUH417DDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Integrated DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI413 | ZXTP2012Z | 3DD13007_Z8 | D60T5050 | BUS23CF | DTA125TKA | KRA741U

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