BUH417D Datasheet. Specs and Replacement

Type Designator: BUH417D  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 55 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 7 A

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO3PML

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BUH417D datasheet

 ..1. Size:213K  inchange semiconductor

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BUH417D

isc Silicon NPN Power Transistors BUH417D DESCRIPTION High Switching Speed High Voltage Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage... See More ⇒

Detailed specifications: BU2727AW, BU2727DF, BU508AW, BU508AX, BU508DW, BU508DX, BUF405AFP, BUH1015HI, TIP35C, BUH713, BUH715AF, BUL6825, BUT12AX, BUT56AF, BUW13AW, BUW13W, T06

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