KTB2530 PDF and Equivalents Search

 

KTB2530 PDF Specs and Replacement


   Type Designator: KTB2530
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15000
   Noise Figure, dB: -
   Package: TO3PN
 

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KTB2530 PDF detailed specifications

 ..1. Size:646K  kec
 ktb2530.pdf pdf_icon

KTB2530

SEMICONDUCTOR KTB2530 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER DARLINGTON APPLICATION. A Q B N O K FEATURES DIM MILLIMETERS Complementary to KTD1530 _ A + 15.60 0.20 _ B 4.80 + 0.20 Recommended for 80W Audio Amplifier Output Stage. _ C 19.90 + 0.20 _ D 2.00 0.20 + _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 _ G 3.50 + 0.20 D _ ... See More ⇒

 9.1. Size:341K  kec
 ktb2510.pdf pdf_icon

KTB2530

SEMICONDUCTOR KTB2510 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER A Q B DARLINGTON APPLICATION. K FEATURES Complementary to KTD1510 DIM MILLIMETERS Recommended for 60W Audio Amplifier Output Stage. A 15.9 MAX B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 MAXIMUM RATING (Ta=25 ) G 3.3 MAX d H 9.0 CHARACTERISTIC SYMBOL ... See More ⇒

Detailed specifications: KTB1124 , KTB1151 , KTB1234T , KTB1241 , KTB1260 , KTB1772 , KTB2234 , KTB2510 , 2SC945 , KTB598 , KTB631K , KTB688B , KTB764 , KTB772 , KTB817B , KTB985 , KTC1815 .

History: CSA708O

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