All Transistors. KTC4666 Datasheet

 

KTC4666 Datasheet and Replacement


   Type Designator: KTC4666
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 6 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 600
   Noise Figure, dB: -
   Package: USM
 

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KTC4666 Datasheet (PDF)

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KTC4666

SEMICONDUCTOR KTC4666TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AMPLIFIER APPLICATION. EFEATUREM B MDIM MILLIMETERSHigh hFE : hFE=6003600._A+2.00 0.20D2Noise Figure : 0.5dB(Typ.) at f=100kHz. _+B 1.25 0.15_+C 0.90 0.1031D 0.3+0.10/-0.05_E +2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25)K 0.00-0.10L

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BSX63SMD | 2N5618 | PMST3906 | FMMTA70 | 2N68 | 2N6272 | 2N99

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