KTC4666 Datasheet. Specs and Replacement
Type Designator: KTC4666 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 6 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 600
Package: USM
📄📄 Copy
KTC4666 Substitution
- BJT ⓘ Cross-Reference Search
KTC4666 datasheet
SEMICONDUCTOR KTC4666 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. E FEATURE M B M DIM MILLIMETERS High hFE hFE=600 3600. _ A + 2.00 0.20 D 2 Noise Figure 0.5dB(Typ.) at f=100kHz. _ + B 1.25 0.15 _ + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 MAXIMUM RATING (Ta=25 ) K 0.00-0.10 L ... See More ⇒
Detailed specifications: KTC4080E, KTC4081, KTC4217, KTC4468, KTC4511, KTC4520F, KTC4521F, KTC4527F, TIP35C, KTC4793, KTC5001D, KTC5001L, KTC5027, KTC5027F, KTC5103D, KTC5103L, KTC5197
Keywords - KTC4666 pdf specs
KTC4666 cross reference
KTC4666 equivalent finder
KTC4666 pdf lookup
KTC4666 substitution
KTC4666 replacement
BJT Parameters and How They Relate
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
2sc2580 | 2sc710 | 2sc968 | 2sd217 | bdw93c equivalent | cs7n60f | d613 transistor | fdmc8884 mosfet

