HI10387 Datasheet and Replacement
Type Designator: HI10387
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO-251
HI10387 Datasheet (PDF)
hi10387.pdf

Spec. No. : HE9028HI-SINCERITYIssued Date : 1994.01.25Revised Date : 2004.07.13MICROELECTRONICS CORP.Page No. : 1/4HI10387NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HI10387 is designed for general-purpose amplifier and low-speed switchingapplications.TO-251Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..............................
Datasheet: HBF423 , HD122 , HE8050 , HE8050S , HE8550 , HE8550S , HE9014 , HE9015 , MJE340 , HI112 , HI117 , HI122 , HI127 , HI13003 , HI3669 , HI649A , HI669A .
History: 40233
Keywords - HI10387 transistor datasheet
HI10387 cross reference
HI10387 equivalent finder
HI10387 lookup
HI10387 substitution
HI10387 replacement
History: 40233



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