All Transistors. HI10387 Datasheet

 

HI10387 Datasheet and Replacement


   Type Designator: HI10387
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO-251
 

 HI10387 Substitution

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HI10387 Datasheet (PDF)

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HI10387

Spec. No. : HE9028HI-SINCERITYIssued Date : 1994.01.25Revised Date : 2004.07.13MICROELECTRONICS CORP.Page No. : 1/4HI10387NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HI10387 is designed for general-purpose amplifier and low-speed switchingapplications.TO-251Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..............................

Datasheet: HBF423 , HD122 , HE8050 , HE8050S , HE8550 , HE8550S , HE9014 , HE9015 , MJE340 , HI112 , HI117 , HI122 , HI127 , HI13003 , HI3669 , HI649A , HI669A .

History: KTC3230 | HN1B01FU | 2N4028 | BC257 | GT125E | ZDT42 | ZXTP07012EFF

Keywords - HI10387 transistor datasheet

 HI10387 cross reference
 HI10387 equivalent finder
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