HI10387 Datasheet. Specs and Replacement

Type Designator: HI10387  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO-251

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HI10387 datasheet

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HI10387

Spec. No. HE9028 HI-SINCERITY Issued Date 1994.01.25 Revised Date 2004.07.13 MICROELECTRONICS CORP. Page No. 1/4 HI10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI10387 is designed for general-purpose amplifier and low-speed switching applications. TO-251 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ................................. See More ⇒

Detailed specifications: HBF423, HD122, HE8050, HE8050S, HE8550, HE8550S, HE9014, HE9015, 2SC4793, HI112, HI117, HI122, HI127, HI13003, HI3669, HI649A, HI669A

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