HI10387 PDF and Equivalents Search

 

HI10387 PDF Specs and Replacement


   Type Designator: HI10387
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO-251
 

 HI10387 Substitution

   - BJT ⓘ Cross-Reference Search

   

HI10387 PDF detailed specifications

 ..1. Size:46K  hsmc
 hi10387.pdf pdf_icon

HI10387

Spec. No. HE9028 HI-SINCERITY Issued Date 1994.01.25 Revised Date 2004.07.13 MICROELECTRONICS CORP. Page No. 1/4 HI10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI10387 is designed for general-purpose amplifier and low-speed switching applications. TO-251 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ................................. See More ⇒

Detailed specifications: HBF423 , HD122 , HE8050 , HE8050S , HE8550 , HE8550S , HE9014 , HE9015 , 2SC4793 , HI112 , HI117 , HI122 , HI127 , HI13003 , HI3669 , HI649A , HI669A .

History: HI112 | HI122 | HQP1498QF | PBHV9115X

Keywords - HI10387 pdf specs

 HI10387 cross reference
 HI10387 equivalent finder
 HI10387 pdf lookup
 HI10387 substitution
 HI10387 replacement

 

 
Back to Top

 


 
.