All Transistors. HI112 Datasheet

 

HI112 Datasheet and Replacement


   Type Designator: HI112
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO-251
 
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HI112 Datasheet (PDF)

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HI112

Spec. No. : HE9033HI-SINCERITYIssued Date : 1998.07.01Revised Date : 2005.12.20MICROELECTRONICS CORP.Page No. : 1/5HI112NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HI112 is designed for use in general purpose amplifier and low-speedswitching applications.TO-251Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ...........................

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

Keywords - HI112 transistor datasheet

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