HI112 PDF and Equivalents Search

 

HI112 PDF Specs and Replacement


   Type Designator: HI112
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO-251
 

 HI112 Substitution

   - BJT ⓘ Cross-Reference Search

   

HI112 PDF detailed specifications

 ..1. Size:57K  hsmc
 hi112.pdf pdf_icon

HI112

Spec. No. HE9033 HI-SINCERITY Issued Date 1998.07.01 Revised Date 2005.12.20 MICROELECTRONICS CORP. Page No. 1/5 HI112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI112 is designed for use in general purpose amplifier and low-speed switching applications. TO-251 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature .............................. See More ⇒

Detailed specifications: HD122 , HE8050 , HE8050S , HE8550 , HE8550S , HE9014 , HE9015 , HI10387 , MJE340 , HI117 , HI122 , HI127 , HI13003 , HI3669 , HI649A , HI669A , HI772 .

History: PBHV9115X | HQP1498QF

Keywords - HI112 pdf specs

 HI112 cross reference
 HI112 equivalent finder
 HI112 pdf lookup
 HI112 substitution
 HI112 replacement

 

 
Back to Top

 


 
.