HI122 Datasheet. Specs and Replacement

Type Designator: HI122  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 130 pF

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO-251

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HI122 datasheet

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HI122

Spec. No. HI200102 HI-SINCERITY Issued Date 1998.07.01 Revised Date 2005.07.13 MICROELECTRONICS CORP. Page No. 1/3 HI122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-251 The HI122 is designed of general purpose and low speed switching applications. Darlington Schematic C Features High DC current gain B Bult-in a damper diode at E-C R1 R2 E Absolute Maximum ... See More ⇒

Detailed specifications: HE8050S, HE8550, HE8550S, HE9014, HE9015, HI10387, HI112, HI117, BD335, HI127, HI13003, HI3669, HI649A, HI669A, HI772, HI882, HJ10387

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