HI122 PDF Specs and Replacement
Type Designator: HI122
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 130 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-251
HI122 Substitution
HI122 PDF detailed specifications
hi122.pdf
Spec. No. HI200102 HI-SINCERITY Issued Date 1998.07.01 Revised Date 2005.07.13 MICROELECTRONICS CORP. Page No. 1/3 HI122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-251 The HI122 is designed of general purpose and low speed switching applications. Darlington Schematic C Features High DC current gain B Bult-in a damper diode at E-C R1 R2 E Absolute Maximum ... See More ⇒
Detailed specifications: HE8050S , HE8550 , HE8550S , HE9014 , HE9015 , HI10387 , HI112 , HI117 , BD335 , HI127 , HI13003 , HI3669 , HI649A , HI669A , HI772 , HI882 , HJ10387 .
History: HI112 | HQP1498QF | PBHV9115X
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History: HI112 | HQP1498QF | PBHV9115X
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