HI122 Datasheet and Replacement
Type Designator: HI122
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 130 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-251
HI122 Substitution
HI122 Datasheet (PDF)
hi122.pdf

Spec. No. : HI200102HI-SINCERITYIssued Date : 1998.07.01Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/3HI122NPN EPITAXIAL PLANAR TRANSISTORDescriptionTO-251The HI122 is designed of general purpose and low speed switching applications. Darlington SchematicCFeatures High DC current gainB Bult-in a damper diode at E-CR1 R2EAbsolute Maximum
Datasheet: HE8050S , HE8550 , HE8550S , HE9014 , HE9015 , HI10387 , HI112 , HI117 , TIP35C , HI127 , HI13003 , HI3669 , HI649A , HI669A , HI772 , HI882 , HJ10387 .
History: 2SB1694 | TTA1943 | PN200A
Keywords - HI122 transistor datasheet
HI122 cross reference
HI122 equivalent finder
HI122 lookup
HI122 substitution
HI122 replacement
History: 2SB1694 | TTA1943 | PN200A



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