HI122 Datasheet, Equivalent, Cross Reference Search
Type Designator: HI122
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 130 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-251
HI122 Transistor Equivalent Substitute - Cross-Reference Search
HI122 Datasheet (PDF)
..1. Size:35K hsmc
hi122.pdf
hi122.pdf
Spec. No. : HI200102HI-SINCERITYIssued Date : 1998.07.01Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/3HI122NPN EPITAXIAL PLANAR TRANSISTORDescriptionTO-251The HI122 is designed of general purpose and low speed switching applications. Darlington SchematicCFeatures High DC current gainB Bult-in a damper diode at E-CR1 R2EAbsolute Maximum
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
