All Transistors. HJ10387 Datasheet

 

HJ10387 Datasheet and Replacement


   Type Designator: HJ10387
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO-252
 

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HJ10387 Datasheet (PDF)

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HJ10387

Spec. No. : HE6028HI-SINCERITYIssued Date : 1997.06.24Revised Date : 2005.07.14MICROELECTRONICS CORP.Page No. : 1/5HJ10387NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HJ10387 is designed for general purpose amplifier and low speed switchingapplications.TO-252Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..............................

Datasheet: HI122 , HI127 , HI13003 , HI3669 , HI649A , HI669A , HI772 , HI882 , 9014 , HJ112 , HJ117 , HJ122 , HJ127 , HJ13003 , HJ3669 , HJ667A , HJ669A .

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