HJ10387 Datasheet, Equivalent, Cross Reference Search
Type Designator: HJ10387
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO-252
HJ10387 Transistor Equivalent Substitute - Cross-Reference Search
HJ10387 Datasheet (PDF)
..1. Size:50K hsmc
hj10387.pdf
hj10387.pdf
Spec. No. : HE6028HI-SINCERITYIssued Date : 1997.06.24Revised Date : 2005.07.14MICROELECTRONICS CORP.Page No. : 1/5HJ10387NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HJ10387 is designed for general purpose amplifier and low speed switchingapplications.TO-252Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..............................
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
