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HJ10387 PDF Specs and Replacement


   Type Designator: HJ10387
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO-252
 

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HJ10387 PDF detailed specifications

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HJ10387

Spec. No. HE6028 HI-SINCERITY Issued Date 1997.06.24 Revised Date 2005.07.14 MICROELECTRONICS CORP. Page No. 1/5 HJ10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ10387 is designed for general purpose amplifier and low speed switching applications. TO-252 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ................................. See More ⇒

Detailed specifications: HI122 , HI127 , HI13003 , HI3669 , HI649A , HI669A , HI772 , HI882 , BC558 , HJ112 , HJ117 , HJ122 , HJ127 , HJ13003 , HJ3669 , HJ667A , HJ669A .

History: HEPS9146 | 2SC2116

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